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| RB451F Diodes Schottky barrier diode RB451F !Applications Low power rectification !External dimensions (Units : mm) 2.00.2 1.30.1 0.90.1 0.3 0.6 0.30.1 0.150.05 (All leads have the same dimensions) !Construction Silicon epitaxial planar ROHM : UMD3 EIAJ : SC - 70 JEDEC : SOT - 323 !Circuit !Absolute maximum ratings (Ta = 25C) Parameter Peak reverse voltage DC reverse voltage Mean rectifying current Peak forward surge current Junction temperature Storage temperature 60Hz for 1 Symbol VRM VR IO IFSM Tj Tstg Limits 40 40 0.1 1 125 -40~+125 Unit V V A A C C !Electrical characteristics (Ta = 25C) Parameter Forward voltage Reverse current Capacitance between terminals Symbol VF1 VF2 IR CT Min. - - - - Typ. - - - 6.0 Max. 0.55 0.34 30 - Unit V V A pF IF=100mA IF=10mA VR=10V Conditions VR=10V, f=1MHz Note) ESD sensitive product handling required. 0.1Min. 3C !Features 1) Small surface mounting type. (UMD3) 2) Low VF. (VF=0.45V Typ. at 100mA) 3) High reliability. 0.65 0.65 1.250.1 2.10.1 0~0.1 RB451F Diodes !Electrical characteristic curves (Ta = 25C) Typ. pulse measurement REVERSE CURRENT : IR (A) Typ. pulse measurement Ta=125C 100m 1m CAPACITANCE BETWEEN TERMINALS : CT (pF) 1 10m 100 FORWARD CURRENT : IF (A) 10 10m 100 75C Ta 25 C C 75 1m =1 2 C 5C 10 -2 5 1 25C 1 100 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.1 0 5 10 15 20 25 30 35 0.1 0 5 10 15 20 25 FORWARD VOLTAGE : VF (V) REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig. 1 Forward characteristics Fig. 2 Reverse characteristics Fig. 3 Capacitance between terminals characteristics 100 Io CURRENT (%) 80 60 40 20 0 0 25 50 75 100 125 AMBIENT TEMPERATURE : Ta (C) Fig. 4 Derating curve (mounting on glass epoxy PCBs) |
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